High-Efficiency Single-Component Organic Light-Emitting Transistors
The self-compensation effect of heavily Mg doped p-GaN films studied by S...
Different influence of InGaN lower waveguide layer on the performance of ...
Internet of Things to network smart devices for ecosystem monitoring
Investigation of fast light in three-layer waveguides composed of negativ...
Low power consumption thermo-optic switch formed by an integrated process...
Revealing angular momentum transfer channels and timescales in the ultraf...
An online brain-computer interface in mobile virtual reality environments
The unique magnetic damping enhancement in epitaxial Co2Fe1-xMnxAl films

Monte Carlo simulation of avalanche noise characteristics of type II InAs/GaSb superlattice avalanche photodiodes


Authors: Zhao, CC; Huang, JL; Zhang, YH; Huang, WJ; Nie, BY; Cao, YL; Ma, WQ


Volume: 301 Published: OCT 2019 Language: English Document type: Article

DOI: 10.1016/j.ssc.2019.113699


A Monte Carlo model, which takes account of the stochastic nature of carrier scattering during transportation, including impact ionization, is presented here. To verify the model, it is used to simulate the field dependent drift velocity of electrons transporting in the bulk InAs material. The results are consistent with the experimental data. Then, the model is applied to type II InAs/GaSb superlattice (SL) avalanche photodiode (APD) structure and the avalanche noise characteristics at 77 K is calculated for different wavelengths. Our results reveal that the long wavelength (LW) APD has a higher excess noise factor (F) than the mid wavelength (MW) counterpart, probably due to the fact that holes in the LW SLs are easier to cause the impact ionization. Generally, the F decreases with increasing the device length, except that the device length is very thin for a LW APD.

Full Text: https://www.sciencedirect.com/science/article/pii/S0038109819303515?via%3Dihub


北京市海淀区清华东路甲35号 北京912信箱 (100083)




[email protected]

版权所有 ? 中国科学院半导体研究所

备案号:京ICP备05085259号 京公网安备110402500052 中国科学院半导体所声明

江西多乐彩走势图遗漏 炒股怎么开户 貂蝉杀蓝球2017119期 北京十一选五最大遗漏数据 洗车行就洗外表能赚钱不 浙江十一选五开奖直播 同花顺炒股软件下载 快乐扑克3360网易 海南飞鱼彩票开售了吗 河南十一选五 会赚钱的人的特点 五分彩怎么稳赚不亏 股票融资的类型 巴西对玻利维亚分析 天天电玩城325棋牌下载 七星彩17111期的规律